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www.irf.com 1 irfr3711 irfu3711 smps mosfet hexfet power mosfet v dss r ds(on) max i d 20v 6.5m ? 110a notes through are on page 10 d-pak i-pak irfr3711 irfu3711 applications benefits ultra-low gate impedance very low rds(on) at 4.5v v gs fully characterized avalanche voltage and current high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use high frequency buck converters for server processor power synchronous fet optimized for synchronous buck converters including capacitive induced turn-on immunity 100% r g tested absolute maximum ratin g s symbol parameter units v ds drain-source voltage v v gs gate-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c maximum power dissipation w p d @t c = 25c maximum power dissipation linear derating factor w/c t j , t stg junction and storage temperature range c thermal resistance symbol parameter typ max units r jc junction-to-case ??? 1.04 r ja junction-to-ambient (pcb mount) ??? 50 c/w r ja junction-to-ambient ??? 110 -55 to +150 max 100 69 440 20 20 2.5 0.96 120 pd- 94061b
2 www.irf.com static @ t j = 25c (unless otherwise specified) symbol parameter min typ max units v (br)dss drain-to-source breakdown voltage 20 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.022 ??? v/c ??? 5.2 6.5 ??? 6.7 8.5 v gs(th) gate threshold voltage 1.0 ??? 3.0 v ??? ??? 140 ??? ??? 20 ??? ??? 100 gate-to-source forward leakage ??? ??? 200 gate-to-source reverse leakage ??? ??? -200 dynamic @ t j = 25c (unless otherwise specified) symbol parameter min typ max units g fs forward transconductance 53 ??? ??? s q g total gate charge ??? 29 44 q gs gate-to-source charge ??? 7.3 ??? q gd gate-to-drain ("miller") charge ??? 8.9 ??? q oss output gate charge ??? 33 ??? v gs = 0v, v ds = 10v r g gate resistance 0.3 ??? 2.5 ? t d(on) turn-on delay time ??? 12 ??? t r rise time ??? 220 ??? t d(off) turn-off delay time ??? 17 ??? t f fall time ??? 12 ??? c iss input capacitance ??? 2980 ??? c oss output capacitance ??? 1770 ??? c rss reverse transfer capacitance ??? 280 ??? avalanche characteristics symbol parameter units e as sin g le pulse avalanche ener gy mj i ar avalanche current a diode characteristics symbol parameter min typ max units continuous source current (body diode) pulsed source current (body diode) ??? 0.88 1.3 ??? 0.82 ??? t rr reverse recovery time ??? 50 75 ns q rr reverse recovery charge ??? 61 92 nc t rr reverse recovery time ??? 48 72 ns q rr reverse recovery charge ??? 65 98 nc typ 440 v diode forward voltage a ??? 110 ??? ??? i s i sm v sd ??? na ns nc pf 30 mosfet symbol showing the r ds(on) i dss i gss static drain-to-source on-resistance drain-to-source leakage current m ? a t j = 125c, i f = 16a, v r = 10v di/dt = 100a/s t j = 125c, i s = 30a, v gs = 0v conditions integral reverse p-n junction diode. t j = 25c, i s = 30a, v gs = 0v t j = 25c, i f = 16a, v r = 10v di/dt = 100a/s ??? ??? conditions v ds = 16v, i d = 30a i d = 15a v ds = 10v v gs = 4.5v v gs = 0v v ds = 10v 460 v ds = 20v, v gs = 0v v ds = 16v, v gs = 0v, t j = 125c v gs = 20v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 15a v gs = -20v v gs = 4.5v, i d = 12a max v gs = 4.5v v dd = 10v i d = 30a r g = 1.8 ? v ds = 16v, v gs = 0v ? = 1.0mhz v ds = v gs , i d = 250a
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 110a
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 10 20 30 40 50 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 30a v = 10v ds v = 16v ds 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %

+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package
6 www.irf.com 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 13a 19a 30a q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v
www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets
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6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) min. 0.58 (.023) 0.46 (.018) lead assignments 1 - gate 2 - drain 3 - source 4 - drain 10.42 (.410) 9.40 (.370) notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions shown are before solder dip, solder dip max. +0.16 (.006).
www.irf.com 9

6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - gate 2 - drain 3 - source 4 - drain notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions show n are before solder dip, solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018)
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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 1/04 repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 1.0mh r g = 25 ? , i as = 30a. pulse width 400s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. when mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994 ! $ "".! /0(

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